VM044 D3GAN MPM
VM044HB065WT1TM11X00
Description
The Transfer Molded Half Bridge module integrates 8mΩ Generation 1 Power FETs for a 300Arms class inverter and can be paralleled for higher power.
The D3GaN™ technology uses high-density, lateral GaN power transistor, assembled into a Normally-Off product with extremely low RDS(ON) and fast switching performance.
The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
- Low inductance terminal connection to Busbars
- Weldable power terminals
- Thermal case designed for sintering to the heatsink
- High Threshold voltage for fast switching transients
- High performance SiN ceramic substrate
- Standard 15V gate drive voltage
- NTC sensor
- Package Size 50x38x6mm
Applications
- Hybrid and Electric Vehicle Traction Inverter
- High Power DC-DC Converter
Key performance parameters
| Parameter | Value |
|---|---|
| VDS | 650 V |
| RDSON | 4.4 mΩ |
| QG | 400 nC |
| ID | 360 A |