Description

The VDP-HB-S-V08 is a half-bridge evaluation platform designed to evaluate the V08TC65S1A2 GaN transistor’s performance. The new 8mOhm GaN device has the lowest on-state resistance in the market with state-of-the-art switching performance. This platform allows to verify both Datasheet parameters as well as high power tests.

Key features

• 2 x 8mOhm 650V V08TC65S1A2 GaN
  devices designed for the automotive market.
• Operation up to 500V switching voltage and
  18kW output power (depends on cooling
  solution)
• Control is enabled by separate PWM signals
  for high and low side, at switching frequencies
  of up to 300kHz.
• Optional current sense for “double pulse”
  Energy measurements (measurement example:
  640uJ for 400V/150A)
• PCB holes for direct measurement of switches
  case temperature with a thermal camera
• On board an isolated 15V auxiliary power
  supplies, half bridge gate drivers, adjustable
  dead time control
• The board and its User Guide serve as a
  reference for system design aspects of gate
  driver circuits, single or paralleled half-bridge
  PCB layout, and thermal management.