V08 Half Bridge
The VDP-HB-S-V08 is a half-bridge evaluation platform designed to evaluate the V08TC65S1A2 GaN transistor’s performance. The new 8mOhm GaN device has the lowest on-state resistance in the market with state-of-the-art switching performance. This platform allows to verify both Datasheet parameters as well as high power tests.
- 2 x 8mOhm 650V V08TC65S1A2 GaN
devices designed for the automotive market.
- Operation up to 500V switching voltage and
18kW output power (depends on cooling
- Control is enabled by separate PWM signals
for high and low side, at switching frequencies
of up to 300kHz.
- Optional current sense for “double pulse”
Energy measurements (measurement example:
640uJ for 400V/150A)
- PCB holes for direct measurement of switches
case temperature with a thermal camera
- On board an isolated 15V auxiliary power
supplies, half bridge gate drivers, adjustable
dead time control
- The board and its User Guide serve as a
reference for system design aspects of gate
driver circuits, single or paralleled half-bridge
PCB layout, and thermal management.
Send download link to: