V08 Half Bridge

Development Platform

DAS- 02265-0001

V08 Half Bridge Development Platform


The VDP-HB-S-V08 is a half-bridge evaluation platform designed to evaluate the V08TC65S1A2 GaN transistor’s performance. The new 8mOhm GaN device has the lowest on-state resistance in the market with state-of-the-art switching performance. This platform allows to verify both Datasheet parameters as well as high power tests.

Key features

  • 2 x 8mOhm 650V V08TC65S1A2 GaN
    devices designed for the automotive market.
  • Operation up to 500V switching voltage and
    18kW output power (depends on cooling
  • Control is enabled by separate PWM signals
    for high and low side, at switching frequencies
    of up to 300kHz.
  • Optional current sense for “double pulse”
    Energy measurements (measurement example:
    640uJ for 400V/150A)
  • PCB holes for direct measurement of switches
    case temperature with a thermal camera
  • On board an isolated 15V auxiliary power
    supplies, half bridge gate drivers, adjustable
    dead time control
  • The board and its User Guide serve as a
    reference for system design aspects of gate
    driver circuits, single or paralleled half-bridge
    PCB layout, and thermal management.
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