Development Platform

for 6 x V22 parallel GaN Transistors



The Six Pack Development Platform VDP-HB-6P-V22 is designed to evaluate the performance of parallel connection of the VisIC 650V V22TC65S1A1 GaN transistors. The VDP-HB-6P-V22 can be used to study and demonstrate the performance of the parallel connected V22TC65S1A1 GaN devices, assembled as a Half Bridge for Buck or Boost topology. The VDP-HB-6P-V22 and the User Guide serve as a reference for system design aspects of gate driver circuits, half bridge PCB layout, and thermal management. The VDP-HB-2P-V22 can be configured in a range of input voltages (up to 500V bus) and output power delivery at switching frequencies up to 300kHz. The board includes all necessary components for building a half bridge power stage and provides terminals for an output power inductor and capacitors to allow configuration into different operational modes.

Key features

  • Control is enabled by separate PWM signals for the high and low side, at switching frequencies of up to 1MHz.
  • The platform and its User Guide serve as a reference for system design aspects of gate driver circuits, single or paralleled half-bridge PCB layout, and thermal management.
  • Operation up to 500V input and 20kW output power (depends on the cooling solution).
  • Set includes 2 half-bridges with single or paralleled GaN transistors, allowing current scaling for the evaluated applications.
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