V22 Half Bridge

Development Platform



The VDP-HB-S-V22 evaluation platform is designed to evaluate the performance of the D3GaN (Direct Drive D-Mode) V22TC65S1A1 GaN transistors. The platform is a half bridge power stage consisting of two GaN switches. It equipped with essential components to be easily configured into two basic switch mode power supply (SMPS) topologies: Buck or Boost. The platform is targeted for testing of performance of GaN equipped SMPS, observing of turn on/off characteristics as a function of layout parasitic inductancesand and control sequence parameters, measurement of switching cycle losses.

Key features

  • Operation up to 500V switching voltage and 6kW output power (depends on the cooling
  • Control is enabled by separate PWM signals for the high and low side, at switching frequencies of up to 1MHz.
  • Optional current sense for “double pulse” measurements (measurement example: 160uJ for 400V/35A)
  • Windows for direct measurement of switches case temperature
  •  Onboard an isolated 15V auxiliary power supplies, half-bridge gate drivers, adjustable dead time control
  • The board and its User Guide serve as a reference for system design aspects of gate driver circuits, single or paralleled half-bridge PCB layout, and thermal management.
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