Full Bridge Development Platform


The VDP-FB-S/2P-V22 development platform is used to evaluate the strengths of the VisIC D3GaN (Direct Drive D-Mode) V22TC65S1A GaN transistors on a full-bridge configuration. The platform provides the flexibility of combining the motherboard, the daughter control board and the set of daughter power boards into a variety of half or full bridge power topologies.

Key features

  • Control is enabled by separate PWM signals for the high and low side, at switching frequencies of up to 1MHz.
  • The platform and its User Guide serve as a reference for system design aspects of gate driver circuits, single or paralleled half-bridge PCB layout, and thermal management.
  • Operation up to 500V input and 20kW output power (depends on the cooling solution).
  • Set includes 2 half-bridges with single or paralleled GaN transistors, allowing current scaling for the evaluated applications.
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