8mΩ D³GaN™ Half Bridge Evaluation Board

Description

The VDP-HB-S-VO8L is a half-bridge evaluation platform designed to evaluate the 8mΩ Power GaN transistor’s performance.

The 8mΩ GaN device has the lowest on-state resistance in the market with state-of-the-art switching performance.

This platform allows to verify both Datasheet parameters as well as high power tests.

Key Features

• 2 x 8mOhm 650V VO8TC06551X11 GaN devices designed for the automotive market.
• Operation up to 500V switching voltage and 18kW output power (depends on cooling solution)
• Control is enabled by separate PWM signals for high and low side, at switching frequencies of up to 300kHz.
• Optional current sense for “double pulse” Energy measurements (measurement example: 640uJ for 400V/150A)
• PCB holes for direct measurement of switches case temperature with a thermal camera