V22TG065S1X04
650V D3GaN Power Switch
Description
The V22TG065S1X04 GaN product marks an advancement in high-reliability power semiconductor solutions, combining an SMD package with robust gullwing leads for excellent solderability, with a high-performance Si₃N₄ (silicon nitride) substrate to deliver outstanding mechanical robustness and long-term reliability under demanding thermal cycling conditions. This package, together with optimized thermal paths, enables superior heat dissipation, higher current operation, supporting higher power density and improved system lifetime. The combination of proven packaging technology and state-of-the-art GaN switching performance positions V22TG065S1X04 as a reliable and power efficient solution for next-generation automotive and industrial applications.
Key features
- Ultra-fast Switching
- Kelvin Source connection
- Depletion Mode GaN in Normally-Off package
- Top cooling fully isolated package (3.5KV)
- No Reverse-Recovery charge
- Low On State resistance of 22mΩ
- Low Gate Charge
- High noise immunity with Vth >4V
- Driven by standard 15V Si-MOSFET driver
Applications
- Solar Inverter
- AC-DC Power Supply
- AC motors
- Battery chargers
- Automotive
- Laser driver
Key performance parameters
| Parameter | Value |
|---|---|
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 22 |
| QG(nC) | 41 |
| ID, pulse(A) | 250 |
| ID(A) | 80 |