8mΩ 650V D³GaN™ Power FET
V08TC065A1X11
Description
The D3GaN™ (Direct Drive D-Mode) V08TC065A1X11 Power Switch integrates a patented, high-density, lateral GaN power transistor into a Normally-Off product with extremely low RDSON and exceptionally efficient switching performance. The D3GaN™ technology has been implemented into an Isolated High Power SMD package, an innovation by VisIC Technologies, very effective in applications requiring High Power and efficiency, with Low Volume and Cost.
The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
- Ultra-fast switching
- Kelvin connection
- Normally-Off
- Ultra low RDS(on) of 8mΩ
- High power density
- Fully isolated package (3.5KV)
- High Threshold Voltage >5V
- Driven by standard 15V driver
- Top cooling package
* GaN die/wafer purchase is possible; please contact us
Applications
• AC-DC Power Supply
• AC motors
• Battery chargers
• Automotive
• Laser driver
Key performance parameters
| Parameter | Value |
|---|---|
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 8 |
| QG(nC) | 200 |
| ID(A) | 200 |