2.2mΩ 650V Half-Bridge D³GaN™ Power Module
Prototype VM022HB065ST1AB11X00
Description
The Half Bridge module integrates four 8mOhm 650V GaN devices in parallel, for a half bridge configuration.
The D³GaN™ technology uses high-density, lateral GaN power transistor, assembled into a Normally-Off product, with extremely low RDSON and exceptionally efficient switching performance.
The integrated safety functions ensure safe operation during system startup and shutdown, while having no impact on the switching performance of the GaN transistor.
Gate drive booster stages are incorporated in order to enable low gate loop inductance and miller spike mitigation.
Key features
- Copper base plate for easy heatsink attachment
- High Threshold voltage for fast switching transients
- High performance AlN ceramic.
- Standard 15V gate drive voltage
Applications
- Hybrid and Electric Vehicle Traction Inverter
- High Power DC-DC Converter
Key performance parameters
| Parameter | Value |
|---|---|
| VDS | 650 V |
| RDS(ON) | 2.2 mΩ |
| QG | 444 nC |
| ID | 460 A |
2.2mΩ 650V Half-Bridge D3GaN™
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