We are true to our name:
Vis (noun; Latin) – strength; force; power
IC (in Electronics) – integrated circuit
VisIC was established in 2010 to be a provider of high-voltage (650V and above), high-volume GaN transistors and switches to the ever-growing and rapidly changing power conversion market. VisIC’s technical team had over 200 years of cumulative experience in design, manufacture and application of GaN-based RF devices when they incorporated VisIC. Applying their in-depth understanding of the core materials and associated physics of GaN-based devices, they have created a true GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) that is normally-OFF in its native mode.
VisIC Technologies was founded to develop and bring to market high power transistors and modules based upon compound semiconductor Gallium Nitride (GaN) replacing most of the Silicon (Si) products used in power conversion systems. GaN alone, in the right implementation, can provide the right combination of cost and performance to take power conversion electronics to the next generation of systems that will replace silicon-based components with GaN-based components. VisIC has developed and received patents on the key elements necessary for this game-changing implementation of GaN components. VisIC will also license key elements of their unique GaN process and device technology to selected partners. The results are unique, differentiated products providing the features system designers need along with significant cost and performance advantages.
We will enable power conversion system designers to realize system efficiency improvements and to simultaneously reduce system cost, size and weight by supporting higher switching frequencies. We will provide system designers with a design environment that has interfaces and behaviors with which they are familiar and comfortable. The resultant systems will reduce electrical transmission costs for providers and reduce electrical costs for consumers.