Description
The D3GAN MPM2 power module is a new building block to achieve ultra-low inductance for EV inverter applications. The platform is designed to accommodate Gen1, Gen 1+, Gen 2 and upcoming Gen 2+ chips of D3GAN technology.
The power and terminal loops are optimized to reduce stray inductance in hard switching applications.
By using standard Ag sintering process, a highly reliable connection is guaranteed.
The platform is designed for a highly scalable approach to reach a target of over 500Arms at 400V bus applications.
Key features
• Ultra-fast switching
• Kelvin connection
• Normally-Off
• High power density
• Si3N4 ceramic substrate
• High Threshold Voltage
• Driven by standard 15V MOSFET driver
• Package Size 60x41x4,7mm
Applications
• Automotive electric vehicles
Key performance parameters
Parameter | Value |
---|---|
VDS | 650 V |
RDSON | 1.8 mΩ |
QG | 400 nC |
ID | >500Arms |