2.6 mΩ 650V D³GaN Power Module Prototype
VM030HB065WT2PE21X04
Description
The VM030HB065WT2PE20X04 Half Bridge module prototype integrates a 2 Parallel 4mΩ 650V Gen 2 GaN die in a half bridge configuration. VisIC D3GaN technology uses a high-density, lateral GaN power transistor with extremely low RDS(ON) and exceptionally efficient switching performance.
Key features
- High Threshold voltage for fast switching transients
- High performance SiN ceramic.
- Standard unipolar 15V gate drive voltage
Applications
- Hybrid and Electric Vehicle Traction Inverter
Key performance parameters
| Parameter | Value |
|---|---|
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 2.6 |
| QG(nC) | 607 |
| ID(A) | 340 |