V06 Gen1 PLUS

V06DI065R1X13

Description

VisIC V06DI065R1X13 Die is a Generation 1 PLUS high-density, lateral GaN power transistor with lower RDS(ON) and exceptionally fast switching performance. is very effective in applications requiring high current, high power density and low cost.

 

Key features

  • Depletion Mode GaN
  • No Reverse-Recovery charge
  • Ultra-low On State resistance of 6mΩ
  • Low Gate Charge
  • High noise immunity with Vth >5V
  • Driven by standard 15V Si-MOSFET driver

Applications

  • Automotive motor inverter
  • Solar Inverter
  • Industrial motor inverters

Key performance parameters

ParameterValue
VDS650 V
RDSON6 mΩ
QG200 nC
ID170 A

6mΩ-650V-Bare GaN Die