V04DI065R2X21
650V D-Mode GaN Power Transistor
Description
VisIC V04DI065R2X21 GaN Die is a Generation 1+ high-density, lateral GaN power transistor with improved RDS(ON) over previous Generations.
It has exceptionally fast switching performance and a conveniently small footprint. It is very effective in applications requiring high current, high power density, and low cost.
Key Features
- Depletion Mode GaN
- No Reverse-Recovery charge
- Ultra-low On State resistance of 4mΩ
- Low Gate Charge
- High noise immunity with Vth >5V
- Driven by standard 15V Si-MOSFET driver
Applications
- Automotive
- AC motors
- Solar Inverter
- AC-DC Power Supply
- Battery chargers
- Laser drive
Key performance parameters
| Parameter | Value |
|---|---|
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 4 |
| QG(nC) | 275 |
| ID(A) | 300 |
| ID, pulse(A) | 450 |