May 18-26 | Portland, Oregon

“How to design your power GaN: Key Principles and Common Pitfalls.“

Wide-bandgap materials are often treated as a single category, but GaN HEMTs and vertical SiC devices behave very differently, and those differences matter in real systems. In this talk, Tamara Baksht (CEO, VisIC Technologies) breaks down the core physical and operational principles that drive GaN power device design, and the common pitfalls that can compromise reliability, robustness, and failure behavior.

The session starts by reframing a common misconception: while material classifications (e.g., by bandgap) create a clear line between silicon and WBG, the physics of vertical SiC is often closer to that of vertical silicon MOSFETs than to lateral GaN HEMTs. Designing and deploying GaN effectively, therefore, requires an engineering-level understanding of operating modes, physical design choices, and how these translate into reliability limits and failure mechanisms.

Speaker: Tamara Baksht, CEO VisIC Technologies

Co-authors: Gregory Bunin, Roman Volkov, Lev Stessin, Yulia Roiter, Dana Veprinsky, Valery Veprinsky, Nisim Izhakbaev, Shahar Wagner, Mor Rozen, Dieter Liesabeths, Ilia Bunin, Kurt Smith, David Shapiro, Evgeny Rozanov, Alexnder Firtel, Ray Tsai, Gleb Vetakh.