March 10-12 | Dresden, Germany  

Hans Winter at CIPS 2026:

GaN High Power Module for Efficient BEV Inverter Applications 

This presentation introduces a next-generation automotive inverter based on 650V D-mode GaN HEMT D³GaN™ technology from VisIC, delivering SiC-class performance at silicon-level cost. The solution combines ultra-low switching losses, robust direct gate control, and scalable current capability—enabling precise slew-rate control and exceptional inverter efficiency.

Developed in collaboration with NXP, the dedicated D³GaN gate driver IC introduces GaN-specific real-time Vgs monitoring, reduced PWM dead-time, and advanced OCP/SCP protection strategies designed to meet ASIL-D automotive requirements. Dynamometer testing confirms >99.5% peak efficiency and measurable driving-cycle gains, translating into extended EV range and improved performance.

Speaker
Hans Winter, VP Product, VisIC
With 25+ years in automotive power semiconductors, including leadership roles at Infineon, Nexperia, and ams, Hans Winter drives VisIC’s automotive product strategy and partnerships across Europe and the Americas.

Interested in learning more?
Contact our team at info@visic-tech.com to discuss evaluation modules, design support, and collaboration opportunities.