V22 100A –
D3GaN™ Power Switch

Description
The D3GaN (Direct Drive D-Mode) V22TC65S1A1 Power Switch integrates a patented, high-density, lateral GaN power transistor, into a Normally-Off product with extremely low RDS(ON) and exceptionally efficient switching performance. The D3GaN technology has been implemented into an Isolated High Power SMD package, an innovation by VisIC Technologies – it is very effective in applications requiring High Power and Efficiency, with Low Volume and Cost. The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
• Ultra-fast switching
• Kelvin connection
• Normally-Off
• High power density
• Fully isolated package (3.5KV)
• High Treshold Voltage
• Driven by standard 15V MOSFET driver
• Top cooling
Applications
• Solar Inverter
• AC-DC Power Supply
• AC motor
• Battery charger
• Automotive
• Laser driver
Key performance parameters
Parameter | Value |
---|---|
VDS | 650 V |
RDSON | 22 mΩ |
QG | 41 nC |
ID | 62 A |
Package outline
Pin | Function |
---|---|
17-22 | Source |
1 | Activation signal |
2 | Com signal |
3 | Gate |
4 | Com power |
5 | Enable |
6-11 | Drain |
12-16 | NC* |
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