October 20, 2025 | Pennsylvania Convention Center
Tamara Baksht Presentation at ECCE 2025:
Selecting the Right GaN for High-Power Designs
VisIC Technologies’ CEO Tamara Baksht participated in the special session “Variety of GaN Devices on the Market: WhActive ch to Select for My Design” at ECCE 2025, sharing deep technical insights into how D³GaN™ technology redefines efficiency, robustness, and cost in power conversion.
Her presentation, “Not All GaN Is Created Equal,” addressed key industry myths and demonstrated why Direct-Drive D-mode GaN (D³GaN™) is the most suitable choice for high-power applications—from EV traction inverters to next-generation GenAI data centers.
Key takeaways:
- D³GaN™ outperforms SiC by 2.5× at partial load
- >99.6% inverter efficiency proven in AVL dyno tests
- High active short-circuit robustness and low switching losses
- SiC-level performance at silicon-like cost, ready for mass production by 2028
VisIC’s D³GaN™ platform continues to lead the transition toward high-efficiency, compact, and cost-effective power solutions for electric mobility and advanced energy systems.
Interested in learning more?
Contact our team at info@visic-tech.com to discuss evaluation modules, design support, and collaboration opportunities.