V06DI065R1X14

650V D-Mode GaN Power Transistor

Description

VisIC V06DI065R1X14 GaN Die is a Generation 1+ high-density, lateral GaN power transistor with improved RDS(ON) over previous Generations. It has exceptionally fast switching performance and a conveniently small footprint.
It is very effective in applications requiring high current, high power density and low cost.

Key Features

  •  Depletion Mode GaN
  • No Reverse-Recovery charge
  • Ultra-low On State resistance of 6mΩ
  • Low Gate Charge
  • High noise immunity with Vth >5V
  • Driven by standard 15V Si-MOSFET driver

Applications

  • Automotive
  • AC motors
  • Solar Inverter
  • AC-DC Power Supply
  • Battery chargers
  • Laser drive

Key performance parameters

ParameterValue
VDS(V)650
RDS(ON)(mΩ)6
QG(nC)200
ID(A)280
ID, pulse(A)450
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