V18N65A

D3GaN™ Power Switch

Details

V18N65A is a High voltage D-Mode GaN transistor. The V18G65A provides a patented, high-density, lateral-layout GaN power transistor and advanced package with extremely low RDS(ON), exceptionally fast switching performance and a conveniently small footprint. It is very effective in applications requiring high currents with fast switching.

Key features

•Ultra-fast
•Normally-On
•High power density
•Fully isolated package (2.5KV)

Applications

• Solar Inverters
•AC-DC Power Supply
•AC motors
•Battery chargers
•Automotive
•DC fuse

Key performance parameters

ParameterValue
VDS 650 V
RDS(ON) 18 mΩ
QG 41 nC
ID,pulse180 A
ID 80 A

Package outline

PinFunction
17-22Source
1NC
2Kelvin
3Gate
4-5NC
6-11Drain
12-16NC
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