22mΩ 650V D³GaN™ Power FET
V22TC065S1X01
Description
The D3GaN™ (Direct Drive D-Mode) V22TC065S1X01 Power Switch integrates a patented high-density, lateral GaN power transistor, into a Normally-Off product with extremely low RDSON and exceptionally efficient switching performance. The D3GaN™ technology has been implemented into an Isolated High Power SMD package, an innovation by VisIC Technologies – it is very effective in applications requiring High Power and Efficiency, with Low Volume and Cost.
The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
- Ultra-fast switching performance
- Integrated Kelvin source connection
- Normally-Off operation for enhanced safety
- High power density
- Fully isolated package (3.5 kV)
- High threshold voltage
- Compatible with standard 15 V MOSFET drivers
- Efficient top-side cooling
- Compact package size: 15 × 18 × 3 mm
Applications
• Solar Inverter
• AC-DC Power Supply
• AC motor
• Battery charger
• Automotive
• Laser driver
Key performance parameters
| Parameter | Value |
|---|---|
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 22 |
| QG(nC) | 41 |
| ID(A) | 62 |