8mΩ 650V D³GaN™ Power FET
V08TC065S1X11
Description
The D3GaN™ (Direct Drive D-Mode) V08TC065S1X11 Power Switch integrates a patented, high-density, lateral GaN power transistor, into a Normally-Off product with extremely low RDSON and exceptionally efficient switching performance. The D3GaN™ technology has been implemented into an Isolated High Power SMD package, an innovation by VisIC Technologies, very effect ive in applicat ions requiring High Power and efficiency, with Low Volume and Cost.
The integrated safety functions ensure safe operat ion during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
• Ultra-fast switching
• Kelvin connection
• Normally-Off
• High power density
• Fully isolated package (3.5KV)
• High Threshold Voltage
• Driven by standard 15V MOSFET driver
• Top cooling
• Package Size 21x23x3mm
* GaN die/wafer purchase is possible; please contact us
Applications
• Solar Inverter
• AC-DC Power Supply
• AC motors
• Battery chargers
• Automotive
• Laser driver
Key performance parameters
| Parameter | Value |
|---|---|
| VDS | 650 V |
| RDSON | 8 mΩ |
| QG | 110 nC |
| ID,pulse | 380 A |
| ID | 180 A |
8mΩ 650V D³GaN™ Power FET
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