22mΩ 650V D³GaN™ Power FET
V22TC065S1X03
Description
The D3GaN™ (Direct Drive D-Mode) V22TC065S1X03 Power Switch integrates a patented high-density, lateral GaN power transistor, into a Normally-Off product with extremely low RDSON and exceptionally efficient switching performance. The D3GaN™ technology has been implemented into an Isolated High Power SMD package, an innovation by VisIC Technologies – it is very effective in applications requiring High Power and Efficiency, with Low Volume and Cost.
The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor.
Key features
• Ultra-fast switching
• Kelvin connect ion
• Normally-Off
• High power density
• Fully isolated package (3.5KV)
• High Threshold Voltage
• Driven by standard 15V MOSFET driver
• Top cooling
• Package Size 15x18x3mm
Applications
• Solar Inverter
• AC-DC Power Supply
• AC motor
• Battery charger
• Automotive
• Laser driver
Key performance parameters
| Parameter | Value |
|---|---|
| VDS | 650 V |
| RDSON | 22 mΩ |
| QG | 41 nC |
| ID | 65 A |
22mΩ-650V-D³GaN™ Power FET
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