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tour.name = VisIC
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HTMLText_6028C778_7D0D_4E1F_41DF_011D3BE2890D.html = VDP-HB-6P-V22
Six Pack Development Platform
Easiest and reliable paralleling
Self-balanced temperature
Simple control / drive
Most cost-effective solution
The Six Pack Development Platform VDP-HB-6P-V22 is designed to evaluate the performance of parallel connection of the VisIC 650V V22TC65S1A GaN transistors. The board is a platform to evaluate performance of automotive inverter application where high currents of hundreds of Amps are required. The VDP-HB-6P-V22 can be used to study and demonstrate the performance of the parallel connected V22TC65S1A GaN devices, assembled as Half Bridge for Buck or Boost topology. The VDP-HB-6P-V22 and the User Guide serve as a reference for system design aspects of gate driver circuits, half bridge PCB layout, and thermal management. The VDP-HB-2P-V22 can be configured in a range of input voltages (up to 500V bus) and output power delivery at switching frequencies up to 300kHz. The board includes all necessary components for building a half bridge power stage and provides terminals for an output power inductor and capacitors to allow configuration into different operational modes.
Why GaN?
As the automotive industry is moving from the internal combustion engine (ICE) to a fully electric future, VisIC’s power transistors allow the industry to extend driving ranges and lower costs at the same time. This paradigm shift is only the beginning and we are seeing a tremendous opportunity arising over the coming decade. GaN semiconductors are the technology of choice for the world’s leading automotive manufacturers, allowing for dramatically higher performance than Silicon FETs and a more affordable cost base than Silicon Carbide.
GaN transistors are physically superior to existing materials and have been developed over the last 10 years to a highly reliable transistor with high-performing packaging that produces industry-leading results.
100kW Motor Inverter
Reference Design for 800V power-bus
Most efficient topology for 800V bus
WBG power technology is fast becoming the technology of choice to replace Silicon power technology in EV Motor Drive to achieve better efficiency. It is commonly viewed that GaN technology will be used primarily in the 400V power-bus due to its lower cost compared to other WBG technologies, and SiC is commonly used in the high voltage 800V power-bus for higher power applications. The new 100kW inverter reference design from VisIC proves that GaN technology can also be used in the 800V power-bus applications, producing the most cost-effective solution for both 400V and 800V EV power-bus.
Based on VisIC’s unique D3GaN technology, this 100kW inverter reference design can be adapted to work both under 800V and 900V power-bus. The VisIC GaN devices have highly thermally efficient SMD packaging, high threshold voltage, fast switching, and are easily paralleled for most cost effective, highly efficient, and reliable inverter solution for EV.
6.7kW On-Board Charger
Reference Design
3kW/L
½ the weight
Smallest size
The 6.7kW OBC using VisIC GaN power devices targets plug-in hybrid vehicles/electric vehicles (PHEV/EV) applications. With a universal 110-220V/16-32A AC input and 200-430V DC output for charging the automotive battery by controlling voltage and current flow to the battery. The charger is designed to provide the interfaces to charging standards on the input power side and thus adapts to existing charging infrastructure. The design features VisIC 22mOhm 650V GaN switches operating at high frequencies and demonstrates reduction in power losses, size and weight. The overall advantages include simplifying the cooling systems, reducing the charging time, and reducing the size and cost of the EV.
VDP-FB-S/2P-V22 Full Bridge Development Platform
The VDP-HB-S-V22 evaluation platform is designed to evaluate the performance of the D3GaN (Direct Drive D-Mode) V22TC65S1A GaN transistors. The platform is a half bridge power stage consisting of two GaN switches. It is equipped with essential components to be easily configured into two basic switch mode power supply (SMPS) topologies: Buck or Boost. The platform is targeted for testing the performance of GaN equipped SMPS, for the observation of turn on/off characteristics as a function of layout parasitic inductances and control sequence parameters, and finally the measurement of switching cycle losses. - Operation up to 500V switching voltage and 6kW output power (depends on cooling solution) - Control is enabled by separate PWM signals for the high and the low side, at switching frequencies of up to 1MHz. - Optional current sense for “double pulse” measurements (measurement example: 160uJ for 400V/35A)
V22TC65S1A D3GaN™ Power Switch
Lowest switching losses
Best thermal conductivity
The D3GaN (Direct Drive D-Mode) V22TC65S1A Power Switch integrates a patented, high-density, lateral GaN power transistor, into a Normally - Off product with extremely low RDS(ON) and exceptionally efficient switching performance. The D3GaN technology has been implemented into an Isolated High Power SMD package, developed by VisIC Technologies. This package permits highly effective removal of heat in applications requiring High Power and Efficiency.
The integrated safety functions ensure safe operation during system start up and shutdown, while having no impact on the switching performance of the GaN transistor and easily paralleling for high current applications.
Why VisIC?
- Team with decades of experience with GaN technology, leading to a technological edge and to commercialization
- The early decision for D-mode technology, the leading reliable technology for automotive inverters
- Highest reliability and quality metrics fulfilled
- Proven and working R&D use-cases within automotive inverters and OCBs
Not all GaN transistors are alike. There are two different technologies, D-mode and E-mode. VisIC was an early adopter and supporter of D-mode technology, ultimately the only technology that has proven to enable high-power automotive use-cases, due to its higher gate drive safety margin and higher gate drive noise immunity. VisIC’s D3GaN technology also allows easy and simple paralleling, a critical feature for inverters, and state-of-art packaging for power dissipation.
VisIC has produced the first GaN-based transistors used in automotive inverters and is now in the development and evaluation phase with several OEMs and Tier 1s for series production.