VisIC GaN Products

Transistors and Modules

NameVDS (V)RDS(ON) (mΩ)ID (A)CoolingDimensions, mmDatasheet
V22N65A6502280Top18*15*2.2Download
V80N65B6508020Bottom10*10*2.5Download
V150N65B65015014Bottom10*10*2.5Download
VM40HB120D1,2004050Top73.14*43.17*20.04Download
V18G65A6501850Top18*15*2.25Download

Didn’t find a compatible product? Didn’t see your application? Let’s talk! We’re open to make custom design of GaN Power Transistors and Modules. Our staff has solid background in RF devices as well.

 

Boards

Half Bridge Evaluation Board for V22N65A

The EVB-HB evaluation board is designed to demonstrate VisIC’s 650V GaN-based ALL-Switch.
The Board is a half bridge power stage consisting of two 650V ALL-Switch devices (V22N65A*, 22mΩ/80A, top-side cooled), to  12V floated auxiliary power supplies, half bridge gate drivers, an inductor and heat sinks. Efficiency: 400V HV BUS, 20 Ohm load and switching frequency 200 KHz, the peak efficiency is 99.3%. Power on load is 2500W.

Contacts

Address
VisIC Technologies LTD
Golda Meir 7
Nes Ziona, 7403650 Israel

Telephone
972 8 9720090

Fax
972 8 6909467

E-mail
eliz@visic-tech.com